Atomera and Incize announce collaboration to create an efficient GaN-on-Si architecture

Atomera and Belgium Incize announced a cooperation to combine quantum silicon film technology and radio frequency modeling to improve the effectiveness and stability of silicon substrate nitride (GaN-on-Si). The high-cost silicon carbide solution adopted by Wolfspeed, which has recently been broken and reorganized, makes GaN-on-Si more process-compatible and mass-productive.

This collaboration combines Atomera's exclusively developed Mears Silicon Technology (MST) quantum materials technology, with Incize's radio frequency modeling and analytical capabilities. MST is an ultra-thin silicon film structure designed by quantum engineering that can greatly improve transistor efficiency, power efficiency and thermal stability without further improving existing processes.

For the interface instability and leakage problems of GaN-on-Si, MST is expected to effectively reduce defect density, suppress leakage current, and enhance component reliability and yield. This integration technology will help overcome the limitations of material incompatibility and solve the cost barriers of nitrides.

Representatives from both parties expressed their high expectations for this cooperation. Incize CEO Dr. Mostafa Emam said: "We are very excited to cooperate with Atomera, and their MST technology has shown outstanding performance in silicon-based components. Through our professional and quantitative measurement capabilities in the GaN-on-Si field, both parties have the opportunity to create a new high-performance platform."

Atomera executive Scott Bibaud pointed out: "Incize's expertise in RF modeling is impressive and is our ideal partner to promote the application of MST technology to GaN-on-Si. We look forward to this collaboration bringing significant performance breakthroughs to the industry."

If this technological integration is successfully introduced into the production line, it will be expected to improve power density and heat dissipation efficiency and promote further innovation of compound semiconductors.

Incize and Atomera Announce Strategic Collaboration to Advance GaN-on-Si Technology for Next-Gen RF and Power Devices